Strained channel on insulator device

A semiconductor device includes a substrate (e.g., a silicon substrate) with an insulating layer (e.g., an oxide such as silicon dioxide) disposed thereon. A first semiconducting material layer (e.g., SiGe) is disposed on the insulating layer and a second semiconducting material layer (e.g., Si) is disposed on the first semiconducting material layer . The first and second semiconducting material layers and preferably have different lattice constants such that the first semiconducting material layer is compressive and the second semiconducting material layer is tensile