Dual-type thin-film field-effect transistors and applications
A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive channel layer is formed on the insulating layer and carries current between a source and a drain. The conductive channel layer is adapted to provide a...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A microelectronic device includes a gate layer adapted to receive an input voltage. An insulating layer is formed on the gate layer, and a conductive channel layer is formed on the insulating layer and carries current between a source and a drain. The conductive channel layer is adapted to provide a dual channel. The dual channel includes both a p-channel and an n-channel wherein one of the p-channel and the n-channel are selectively enabled responsive to the input voltage polarity. A method for forming the device and applications are also disclosed and claimed. |
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