Semiconductor device and process for producing the same

Semiconductor device and process for producing the same

A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element...

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Bibliographische Detailangaben
Hauptverfasser: Ishitsuka, Norio, Miura, Hideo, Ikeda, Shuji, Suzuki, Norio, Matsuda, Yasushi, Yoshida, Yasuko, Yamamoto, Hirohiko, Kobayashi, Masamichi, Takamatsu, Akira, Shimizu, Hirofumi, Fukuda, Kazushi, Horibe, Shinichi, Nozoe, Toshio
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A process of producing a semiconductor device having a highly reliable groove isolation structure with a desired radius of curvature formed at the groove upper edge and without formation of any step. The device is produced by reducing the stress generation around the groove upper edge of an element isolation groove on a semiconductor substrate, thereby optimizing the shape of an element isolation groove and making the device finer and improving the device electric characteristics.