Chemical mechanical polishing a substrate having a filler layer and a stop layer

Chemical mechanical polishing a substrate having a filler layer and a stop layer

A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jin, Raymond R, Li, Shijian, Redeker, Fred C, Osterheld, Thomas H
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Jin, Raymond R
Li, Shijian
Redeker, Fred C
Osterheld, Thomas H
description A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.
format Patent
fullrecord <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06863593</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06863593</sourcerecordid><originalsourceid>FETCH-uspatents_grants_068635933</originalsourceid><addsrcrecordid>eNrjZAhwzkjNzUxOzFHITU3OSMwDMwvyczKLMzLz0hUSFYpLk4pLihJLUhUyEssgQmmZOTmpRQo5iZVAMjEvBaSqJL8AIsDDwJqWmFOcyguluRkU3FxDnD10S4sLgKbklRTHpxclgigDMwszY1NLY2MilAAAJN03yw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Chemical mechanical polishing a substrate having a filler layer and a stop layer</title><source>USPTO Issued Patents</source><creator>Jin, Raymond R ; Li, Shijian ; Redeker, Fred C ; Osterheld, Thomas H</creator><creatorcontrib>Jin, Raymond R ; Li, Shijian ; Redeker, Fred C ; Osterheld, Thomas H ; Applied Materials, Inc</creatorcontrib><description>A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.</description><language>eng</language><creationdate>2005</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6863593$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64037</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6863593$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jin, Raymond R</creatorcontrib><creatorcontrib>Li, Shijian</creatorcontrib><creatorcontrib>Redeker, Fred C</creatorcontrib><creatorcontrib>Osterheld, Thomas H</creatorcontrib><creatorcontrib>Applied Materials, Inc</creatorcontrib><title>Chemical mechanical polishing a substrate having a filler layer and a stop layer</title><description>A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2005</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZAhwzkjNzUxOzFHITU3OSMwDMwvyczKLMzLz0hUSFYpLk4pLihJLUhUyEssgQmmZOTmpRQo5iZVAMjEvBaSqJL8AIsDDwJqWmFOcyguluRkU3FxDnD10S4sLgKbklRTHpxclgigDMwszY1NLY2MilAAAJN03yw</recordid><startdate>20050308</startdate><enddate>20050308</enddate><creator>Jin, Raymond R</creator><creator>Li, Shijian</creator><creator>Redeker, Fred C</creator><creator>Osterheld, Thomas H</creator><scope>EFH</scope></search><sort><creationdate>20050308</creationdate><title>Chemical mechanical polishing a substrate having a filler layer and a stop layer</title><author>Jin, Raymond R ; Li, Shijian ; Redeker, Fred C ; Osterheld, Thomas H</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_068635933</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2005</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Jin, Raymond R</creatorcontrib><creatorcontrib>Li, Shijian</creatorcontrib><creatorcontrib>Redeker, Fred C</creatorcontrib><creatorcontrib>Osterheld, Thomas H</creatorcontrib><creatorcontrib>Applied Materials, Inc</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jin, Raymond R</au><au>Li, Shijian</au><au>Redeker, Fred C</au><au>Osterheld, Thomas H</au><aucorp>Applied Materials, Inc</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Chemical mechanical polishing a substrate having a filler layer and a stop layer</title><date>2005-03-08</date><risdate>2005</risdate><abstract>A substrate is chemical mechanical polished with a high-selectivity slurry until the stop layer is at least partially exposed, and then the substrate is polished with a low-selectivity slurry until the stop layer is completely exposed.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_uspatents_grants_06863593
source USPTO Issued Patents
title Chemical mechanical polishing a substrate having a filler layer and a stop layer
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T16%3A42%3A50IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Jin,%20Raymond%20R&rft.aucorp=Applied%20Materials,%20Inc&rft.date=2005-03-08&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06863593%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true