Semiconductor device

The semiconductor device comprises an insulating film formed mainly of a film of polyallyl ether resin; an interconnection structure buried in the insulating film , and having a via portion buried in a groove-shaped via hole and an interconnection portion formed on the via portion and having an eave-shaped portion horizontally extended beyond the via portion; an insulating film formed on the insulating film with the interconnection structure buried in and formed mainly of a film of organosilicate glass; and an interconnection structure buried in the insulating film and connected to the interconnection structure . Thus, the stresses to be exerted to the insulating films are decreased, the generation of cracks and peelings generated in the interfaces between the insulating films and in the insulating films due to the stresses generated at the ends of the interconnection structures can be effective prevented.