High speed composite p-channel Si/SiGe heterostructure for field effect devices

A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a highe...

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Bibliographische Detailangaben
Hauptverfasser: Chu, Jack Oon, Hammond, Richard, Ismail, Khalid EzzEldin, Koester, Steven John, Mooney, Patricia May, Ott, John A
Format: Patent
Sprache:eng
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Zusammenfassung:A method and a layered heterostructure for forming p-channel field effect transistors is described incorporating a plurality of semiconductor layers on a semiconductor substrate, a composite channel structure of a first epitaxial Ge layer and a second compressively strained SiGe layer having a higher barrier or a deeper confining quantum well and having extremely high hole mobility. The invention overcomes the problem of a limited hole mobility for a p-channel device with only a single compressively strained SiGe channel layer.