Semiconductor device having a wire bond pad and method therefor

An integrated circuit has a wire bond pad. The wire bond pad is formed on a passivation layer over active circuitry and/or electrical interconnect layers of the integrated circuit. The wire bond pad is connected to a plurality of final metal layer portions. The plurality of final metal layer portions are formed in a final interconnect layer of the interconnect layers. In one embodiment, the bond pad is formed from aluminum and the final metal layer pads are formed from copper. The wire bond pad allows routing of conductors in a final metal layer directly underlying the bond pad, thus allowing the surface area of the semiconductor die to be reduced.