Forming defect prevention trenches in dicing streets
A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a sub...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw. |
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