Forming defect prevention trenches in dicing streets

A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a sub...

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Bibliographische Detailangaben
Hauptverfasser: Mulligan, Rose A, He, Jun, Marieb, Thomas, Menezes, Susanne, Towle, Steven
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of dicing a microelectronic device wafer comprising forming at least one trench in at least one dicing street on the microelectronic device wafer, wherein the trench prevents cracking and/or delamination problems in the interconnect layer of the microelectronic device wafers caused by a subsequent dicing by a wafer saw.