Structure and method for eliminating time dependent dielectric breakdown failure of low-k material

The present invention relates generally to semiconductor device processing and, more particularly, to a structure and method for eliminating time dependent dielectric breakdown failure of low-k material. An interconnect structure for a semiconductor device includes a metallization line formed within...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Agarwala, Birendra N, Nguyen, Du B, Rathore, Hazara S
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!