Structure and method for eliminating time dependent dielectric breakdown failure of low-k material

The present invention relates generally to semiconductor device processing and, more particularly, to a structure and method for eliminating time dependent dielectric breakdown failure of low-k material. An interconnect structure for a semiconductor device includes a metallization line formed within a low-k dielectric material, the metallization line being surrounded on bottom and side surfaces thereof by a liner material. An embedded dielectric cap is formed over a top surface of the metallization line, wherein the embedded dielectric cap has a sufficient thickness so as to separate a top surface of the liner material from a hardmask layer formed over the low-k dielectric material.