Photomask, method of generating resist pattern, and method of fabricating master information carrier
1. Field of the Invention A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the r...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
container_end_page | |
---|---|
container_issue | |
container_start_page | |
container_title | |
container_volume | |
creator | Yanagi, Terumi Komura, Nobuyuki Ishida, Tatsuaki Miyata, Keizo |
description | 1. Field of the Invention
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed. |
format | Patent |
fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06821869</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06821869</sourcerecordid><originalsourceid>FETCH-uspatents_grants_068218693</originalsourceid><addsrcrecordid>eNqNzLsKAjEQheE0FqK-wzzACl5gWWtRLC3sZdxMsmHNRGbG9zeihaXVD4ePM3X-PBQrGXVsIJMNxUMJEIlJ0BJHENKkBg80I-EGkP0PDHiT1H9kPakEEociuU6FoUeRRDJ3k4B3pcW3MwfHw2V_Wj61_hKbXqPgO6u226y7drf9g7wAn6FABg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Photomask, method of generating resist pattern, and method of fabricating master information carrier</title><source>USPTO Issued Patents</source><creator>Yanagi, Terumi ; Komura, Nobuyuki ; Ishida, Tatsuaki ; Miyata, Keizo</creator><creatorcontrib>Yanagi, Terumi ; Komura, Nobuyuki ; Ishida, Tatsuaki ; Miyata, Keizo ; Matsushita Electric Industrial Co., Ltd</creatorcontrib><description>1. Field of the Invention
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6821869$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64014</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6821869$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Yanagi, Terumi</creatorcontrib><creatorcontrib>Komura, Nobuyuki</creatorcontrib><creatorcontrib>Ishida, Tatsuaki</creatorcontrib><creatorcontrib>Miyata, Keizo</creatorcontrib><creatorcontrib>Matsushita Electric Industrial Co., Ltd</creatorcontrib><title>Photomask, method of generating resist pattern, and method of fabricating master information carrier</title><description>1. Field of the Invention
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNqNzLsKAjEQheE0FqK-wzzACl5gWWtRLC3sZdxMsmHNRGbG9zeihaXVD4ePM3X-PBQrGXVsIJMNxUMJEIlJ0BJHENKkBg80I-EGkP0PDHiT1H9kPakEEociuU6FoUeRRDJ3k4B3pcW3MwfHw2V_Wj61_hKbXqPgO6u226y7drf9g7wAn6FABg</recordid><startdate>20041123</startdate><enddate>20041123</enddate><creator>Yanagi, Terumi</creator><creator>Komura, Nobuyuki</creator><creator>Ishida, Tatsuaki</creator><creator>Miyata, Keizo</creator><scope>EFH</scope></search><sort><creationdate>20041123</creationdate><title>Photomask, method of generating resist pattern, and method of fabricating master information carrier</title><author>Yanagi, Terumi ; Komura, Nobuyuki ; Ishida, Tatsuaki ; Miyata, Keizo</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_068218693</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Yanagi, Terumi</creatorcontrib><creatorcontrib>Komura, Nobuyuki</creatorcontrib><creatorcontrib>Ishida, Tatsuaki</creatorcontrib><creatorcontrib>Miyata, Keizo</creatorcontrib><creatorcontrib>Matsushita Electric Industrial Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Yanagi, Terumi</au><au>Komura, Nobuyuki</au><au>Ishida, Tatsuaki</au><au>Miyata, Keizo</au><aucorp>Matsushita Electric Industrial Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Photomask, method of generating resist pattern, and method of fabricating master information carrier</title><date>2004-11-23</date><risdate>2004</risdate><abstract>1. Field of the Invention
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed.</abstract><oa>free_for_read</oa></addata></record> |
fulltext | fulltext_linktorsrc |
identifier | |
ispartof | |
issn | |
language | eng |
recordid | cdi_uspatents_grants_06821869 |
source | USPTO Issued Patents |
title | Photomask, method of generating resist pattern, and method of fabricating master information carrier |
url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T10%3A09%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Yanagi,%20Terumi&rft.aucorp=Matsushita%20Electric%20Industrial%20Co.,%20Ltd&rft.date=2004-11-23&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06821869%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |