Photomask, method of generating resist pattern, and method of fabricating master information carrier
1. Field of the Invention A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the r...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 1. Field of the Invention
A recess for deaeration is formed in the surface of a resist film by using the photolithography technique, a photomask is allowed to come into contact with projections for close contact on both sides or around the recess for deaeration, and evacuation is performed via the recess for deaeration, thereby enhancing close contact between the photomask and the projections for close contact. With the configuration, a resist pattern having an accurate recess while preventing diffraction of light is formed. |
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