Process and apparatus for removal of photoresist from semiconductor wafers using spray nozzles

This invention relates generally to methods and apparatus for removing photoresist from the surfaces of substrates, and specifically to methods and apparatus for removing photoresist from silicon semiconductor wafers using ozonated deionized water. A process for removing photoresist from semiconductor wafers is disclosed wherein at least one semiconductor wafer having at least one layer of photoresist is positioned in a process tank; ozone gas is provided to said process tank; and said semiconductor wafer is spayed with a mixture of ozone and deionized water via at least one nozzle. The temperature during the process is maintained at or above ambient temperature. The ozone gas supplied to the tank is preferably under pressure within said process tank and the nozzles preferably spray the mixture of deionized water and ozone at a nozzle pressure between 5 and 10 atmospheres. In another embodiment, the invention is an apparatus for carrying out the process.