Polysilicon linewidth measurement structure with embedded transistor

The present invention relates to the manufacturing of semiconductor devices, and more particularly, to forming measurement structures that include embedded transistors. A semiconductor device includes a grating structure having a plurality of parallel lines, and at least one of the multiple parallel lines is a gate electrode line of a transistor, which includes source/drain regions proximate to the gate electrode line, and vias extending to the gate electrode line and the source/drain regions. A method of manufacturing the semiconductor device is also disclosed.