Slurry for mechanical polishing (CMP) of metals and use thereof

Slurry for mechanical polishing (CMP) of metals and use thereof

The present invention relates to slurry compositions that are useful for polishing or planarizing a surface. The present invention is especially useful for polishing or planarizing copper used as interconnect wiring in integrated circuit devices such as semiconductor wafers containing copper damasce...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Brigham, Michael Todd, Canaperi, Donald Francis, Cobb, Michael Addison, Cote, William, Davis, Kenneth Morgan, Estes, Scott Alan, Gordon, Edward Jack, Hannah, James Willard, Krishnan, Mahadevaiyer, Lofaro, Michael Francis, MacDonald, Michael Joseph, Schaffer, Dean Allen, Slusser, George James, Tornello, James Anthony, White, Eric Jeffrey
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to slurry compositions that are useful for polishing or planarizing a surface. The present invention is especially useful for polishing or planarizing copper used as interconnect wiring in integrated circuit devices such as semiconductor wafers containing copper damascene and dual damascene features. The present invention also relates to polishing processes employing the compositions of the present invention. Slurry compositions comprising an oxidizing agent, optionally a copper corrosion inhibitor, abrasive particles; surface active agent, a service of chloride and a source of sulfate ions.