Semiconductor device and method for fabricating the semiconductor device

1. Field of the Invention The semiconductor device comprises an insulation layer formed on surfaces of semiconductor chips where the electrodes are formed, and a wiring layer formed on the insulation layer. The wiring layer formed on the insulation layer and the electrodes of the semiconductor chips...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Tsubosaki, Kunihiro
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:1. Field of the Invention The semiconductor device comprises an insulation layer formed on surfaces of semiconductor chips where the electrodes are formed, and a wiring layer formed on the insulation layer. The wiring layer formed on the insulation layer and the electrodes of the semiconductor chips are electrically connected to each other via connection members, such as wire bumps, etc. formed on the electrodes of the semiconductor chip.