Semiconductor device having a redundancy function

This application is based upon and claims the benefit of priority from the prior Japanese Patent Application No. 2002-372382, filed Dec. 24, 2002, the entire contents of which are incorporated herein by reference. A semiconductor device includes first to third functional areas parted each other by a boundary region on a semiconductor substrate. A memory block is formed in the first functional area and includes memory cells and a redundancy memory cell substituted for one memory cell. A functional circuit block is formed in the second functional area and connected with the memory block via an interconnection line. A program interconnection block is formed in the third functional area so that it does not overlap with the interconnection line and includes a program interconnection section which forms a program forming a signal path so that a defective memory cell is substituted by the redundancy memory cell. A data transfer section extends over from the program interconnection block to the memory block and transfers program information relevant to the program of the program interconnection section to the memory block.