Method of making NiFeCo-O-N or NiFeCo-N films for shields and/or poles of a magnetic head

1. Field of the Invention A specified amount of NO or Nis employed in a process gas of a DC magnetron for sputter depositing single or laminated films of NiFeCo-O-N or NiFeCo-N with a high uniaxial anisotropy Hafter annealing these films along their hard axes. The films can be used for shield layers...

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Bibliographische Detailangaben
1. Verfasser: Westwood, John David
Format: Patent
Sprache:eng
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Zusammenfassung:1. Field of the Invention A specified amount of NO or Nis employed in a process gas of a DC magnetron for sputter depositing single or laminated films of NiFeCo-O-N or NiFeCo-N with a high uniaxial anisotropy Hafter annealing these films along their hard axes. The films can be used for shield layers and/or pole piece layers in a magnetic head.