Charged-particle beam drawing data creation method, and charged-particle beam drawing apparatus using the same

The present invention relates to a charged-particle beam drawing method for drawing the pattern of a semiconductor integrated circuit such as an LSI on a sample such as a mask or wafer at high speed and high precision and, more particularly, to a data creation method for realizing high-precision dra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: Okunuki, Masahiko
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a charged-particle beam drawing method for drawing the pattern of a semiconductor integrated circuit such as an LSI on a sample such as a mask or wafer at high speed and high precision and, more particularly, to a data creation method for realizing high-precision drawing using drawing pattern data prepared by compressing data, and a charged-particle beam drawing apparatus using the same. A charged-particle beam drawing data creation method of supplying bit information created from design pattern data in the scanning direction of a charged-particle beam, ON/OFF-controlling the charged-particle beam to irradiate a sample surface, and exposing a two-dimensional pattern by scanning the charged-particle beam includes the step of extracting a cell pattern as one unit of a periodic structure from design pattern data having a periodic structure, and registering the cell pattern, the step of creating arrangement data to be rearranged in a basic drawing region defined by a charged-particle beam exposure apparatus using the cell pattern, and registering the arrangement data, and the step of cutting out data from the cell pattern in accordance with information of the arrangement data, and creating data of the basic drawing region.