High power distributed feedback ridge waveguide laser

The present invention relates to a ridge waveguide (RWG) semiconductor laser diode having increased output power, to a distributed feedback (DFB) RWG semiconductor laser diode of this kind which exhibits dynamic single longitudinal mode along with increased output power, and, more particularly, to a high power RWG semiconductor laser diode, such as a DFB RWG semiconductor laser diode, having reduced antiguiding effects within the waveguide which permits a larger single mode guide to be utilized. A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.