Method for providing a dummy feature and structure thereof

This invention relates generally to semiconductor processing, and more specifically, to forming air gaps as a part of a semiconductor device. Dummy features () are formed within an interlevel dielectric layer (). A non-gap filling dielectric layer () is formed over the dummy features () to form void...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Yu, Kathleen C, Travis, Edward O, Smith, Bradley P
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!