Method for providing a dummy feature and structure thereof

This invention relates generally to semiconductor processing, and more specifically, to forming air gaps as a part of a semiconductor device. Dummy features () are formed within an interlevel dielectric layer (). A non-gap filling dielectric layer () is formed over the dummy features () to form voids () between dummy features () or between a dummy feature () and a current carrying region (). The dummy features () can be conductive () and therefore, formed when forming the current carrying region (). In another embodiment, the dummy features () are insulating () and are formed after forming the current carrying region (). In yet another embodiment, both conductive and insulating dummy features () are formed. In a preferred embodiment, the voids () are air gaps, which are a low dielectric constant material.