Microwave array transistor for low-noise and high-power applications

The present invention relates to a transistor structure that may be arranged in an array of transistors. In particular, the present invention relates to a transistor structure that may be included in a transistor array for low noise and high power applications. A transistor array including a plurality of transistors. Each transistor includes an emitter. An emitter region contact overlies each emitter region. At least one base region underlies each emitter region and is common to a plurality of transistors in the array. At least one base contact overlies the at least one base region and is associated with each transistor. A plurality of the base contacts are common to at least two transistors in the array. At least one collector reach through is associated with each transistor. A collector reach through contact overlies each collector reach through. A buried layer subcollector region of electrically conducting material electrically connects the collector reach through region to the collector pedestal region of each transistor.