Exposing method and semiconductor device fabricated by the exposing method
1. Field of the Invention In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 , emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an obli...
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| Format: | Patent |
| Sprache: | eng |
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