Exposing method and semiconductor device fabricated by the exposing method

1. Field of the Invention In an exposing method reflecting synchrotron radiation, having a critical wavelength of 8.46 , emitted from a radiation generator (SR device) having a deflecting magnetic field of 4.5 T and electron acceleration energy of 0.7 GeV twice through rhodium mirrors having an oblique-incidence angle of 1°, transmitting the light through a beryllium window of 20 m and through an X-ray mask prepared by forming an X-ray absorber pattern on a diamond mask substrate of 2 m in thickness and thereafter irradiating a resist surface provided on a substrate with the light, the resist has a main absorption waveband in the wave range of at least 3 and not more than 13 and contains an element generating Auger electrons having energy in the range of at least about 0.51 KeV and not more than 2.6 KeV upon exposure.