Method of forming a low resistance semiconductor device and structure therefor

The present invention relates, in general, to electronics, and more particularly, to methods of forming semiconductor devices and structure. A transistor () is formed with a low resistance trench structure that is utilized for a gate () of the transistor. The low resistance trench structure facilita...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Azam, Misbahul, Pearse, Jeffrey, Hannoun, Daniel G
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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