Column repair circuit in ferroelectric memory

The present invention claims the benefit of the Korean Patent Application No. P2001-58279 filed in Korea on Sep. 20, 2001, which is hereby incorporated by reference. A column repair circuit in a non-volatile ferroelectric memory having main columns and redundancy columns includes a data input/output buffer part for data input/output between the non-volatile ferroelectric memory and an external circuit, a failed column coding part for controlling the main columns and the redundancy columns and connected in response to a failed column address signal to one of main input/output lines in the input/output buffer part and redundancy input/output lines, a repair column adjusting circuit part connected to the failed column coding part for providing a redundancy mode control signal, a data bus amplifying part for amplifying data between the main input/output lines and the main columns to control read/write operation, and a redundancy data bus amplifying part for amplifying data between the redundancy input/output lines and the redundancy columns in response to the redundancy mode control signal.