X-ray exposure method, x-ray exposure apparatus, fine structure and semiconductor device

1. Field of the Invention An X-ray exposure method and an X-ray exposure apparatus using exposure X-rays having short wavelengths for formation of a fine pattern in X-ray lithography and suppressing fogging due to secondary electrons from a substrate bearing a resin film. The X-ray exposure method includes forming, by coating, a resist film on a substrate made of a material having an absorption-edge in or near an illumination wavelength range; and illuminating the resist film with X-rays having a wavelength range, including the absorption-edge wavelength, through an X-ray mask. The X-ray intensity is reduced in the wavelength range of an absorption spectrum including the absorption-edge of the material of the substrate in an optical path leading to the substrate.