Diamond barrier layer
This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects. An integrated circuit including an electrically conductive interconnect havi...
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| creator | Catabay, Wilbur G Wang, Zhihai |
| description | This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects.
An integrated circuit including an electrically conductive interconnect having a first barrier layer consisting essentially of a diamond film. A seed layer consisting essentially of copper is disposed adjacent the first barrier layer. A conductive layer consisting essentially of copper is disposed adjacent the seed layer. |
| format | Patent |
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An integrated circuit including an electrically conductive interconnect having a first barrier layer consisting essentially of a diamond film. A seed layer consisting essentially of copper is disposed adjacent the first barrier layer. A conductive layer consisting essentially of copper is disposed adjacent the seed layer.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6734560$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64015</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6734560$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Catabay, Wilbur G</creatorcontrib><creatorcontrib>Wang, Zhihai</creatorcontrib><creatorcontrib>LSI Logic Corporation</creatorcontrib><title>Diamond barrier layer</title><description>This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects.
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An integrated circuit including an electrically conductive interconnect having a first barrier layer consisting essentially of a diamond film. A seed layer consisting essentially of copper is disposed adjacent the first barrier layer. A conductive layer consisting essentially of copper is disposed adjacent the seed layer.</abstract><oa>free_for_read</oa></addata></record> |
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| language | eng |
| recordid | cdi_uspatents_grants_06734560 |
| source | USPTO Issued Patents |
| title | Diamond barrier layer |
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