Diamond barrier layer

This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects. An integrated circuit including an electrically conductive interconnect havi...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Catabay, Wilbur G, Wang, Zhihai
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:This invention relates to the field of integrated circuit fabrication. More particularly, this invention relates to a process of forming a composite barrier layer including a diamond film for low-k dielectric interconnects. An integrated circuit including an electrically conductive interconnect having a first barrier layer consisting essentially of a diamond film. A seed layer consisting essentially of copper is disposed adjacent the first barrier layer. A conductive layer consisting essentially of copper is disposed adjacent the seed layer.