Method of making an edge seal for a semiconductor device

The present invention relates generally to a new semiconductor process and structure, and more particularly, to a new semiconductor process and structure which provides an edge seal with improved resistance to crack propagation and impurity ingress in semiconductor devices (also referred to herein as integrated circuit devices) with preferably high conductivity copper metallurgy and low-k dielectric material. An edge seal around the periphery of an integrated circuit device which environmentally protects the copper circuitry from cracks that may form in the low-k interlevel dielectric during dicing. The edge seal essentially constitutes a dielectric wall between the copper circuitry and the low-k interlevel dielectric near the periphery of the integrated circuit device. The dielectric wall is of a different material than the low-k interlevel dielectric.