Method to form silicates as high dielectric constant materials

The instant invention pertains to semiconductor device fabrication and processing and more specifically to a method of fabricating a higher dielectric constant material using a silicate. An embodiment of the instant invention is a method of forming a semiconductor device situated over a semiconductor substrate, the method comprising the steps of: forming a layer of suboxide material (layer of FIG. ) over the substrate (substrate of FIGS. ), the suboxide material comprised of a material selected from the group consisting of: HfSiO, ZrSiO, LaSiO, YSiO, ScSiO, and CeSiO; and forming a structure (layer of FIG. ) on the layer of suboxide material. In an alternative embodiment, semiconductor device is a transistor where and the structure formed on the layer of suboxide material is a gate electrode (preferably comprised of: polycrystalline silicon, tungsten, titanium, tungsten nitride, titanium nitride, platinum, aluminum, and any combination thereof. In another alternative embodiment, the semiconductor device is a storage device where a bottom electrode is formed under and abutting the suboxide material which forms the dielectric to the storage device and the structure formed on the layer of suboxide material is the top electrode of the storage device.