Real-time photoemission detection system
The present invention relates generally to semiconductor devices and their fabrication and, more particularly, to semiconductor devices and their manufacture involving techniques for analyzing and debugging circuitry within an integrated circuit. Post-manufacturing analysis of a semiconductor chip i...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | The present invention relates generally to semiconductor devices and their fabrication and, more particularly, to semiconductor devices and their manufacture involving techniques for analyzing and debugging circuitry within an integrated circuit.
Post-manufacturing analysis of a semiconductor chip is enhanced via a method and system for viewing emissions through substrate in the back side of the chip. According to an example embodiment of the present invention, a portion of circuitry in a semiconductor chip is excited, and an emission is generated. An optical microscope is directed at the backside of the chip, and an image of the emission is obtained. The optical microscope is coupled to an indium-gallium-arsenic (InGaAs) camera that is used to detect the emission. In this manner, emissions can be detected through substrate in a semiconductor chip. |
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