Method of manufacturing semiconductor device having an aluminum wiring layer
The present invention relates to a semiconductor device having a wiring structure in which an Al wiring layer is embedded in a interlayer-insulating film and manufacturing method thereof. A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates to a semiconductor device having a wiring structure in which an Al wiring layer is embedded in a interlayer-insulating film and manufacturing method thereof.
A semiconductor device is constituted by embedding an Al wiring layer in a second object formed on a interlayer-insulating film on one principal plane of a semiconductor substrate and connecting with an Al wiring formed on the substrate and at least, an Nb liner film and NbAl alloy film are formed between the second object and the Al wiring layer. |
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