Pre-pattern surface modification for low-k dielectrics using A H2 plasma

The invention is generally related to the field of forming interconnect layers in a semiconductor device and more specifically to patterning low-k dielectric films. A low-k dielectric layer () is treated with a dry Hplasma pretreatment to improve patterning. Resist poisoning occurs due to an interaction between low-k films (), such as OSG, and DUV resist (). The Hplasma pre-treatment is performed to either pretreat a low-k dielectric () before forming the pattern () or during a rework of the pattern ().