Semiconductor device
The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit. Disclosed is a technique capable of improving a power supply efficiency in a power...
Gespeichert in:
| Hauptverfasser: | , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Takagawa, Kyouichi Sakamoto, Kozo Matsuura, Nobuyoshi Koyano, Masashi |
| description | The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit.
Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET. |
| format | Patent |
| fullrecord | <record><control><sourceid>uspatents_EFH</sourceid><recordid>TN_cdi_uspatents_grants_06700793</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>06700793</sourcerecordid><originalsourceid>FETCH-uspatents_grants_067007933</originalsourceid><addsrcrecordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwMzcwMDc0tiYCCUASj4h2A</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>Semiconductor device</title><source>USPTO Issued Patents</source><creator>Takagawa, Kyouichi ; Sakamoto, Kozo ; Matsuura, Nobuyoshi ; Koyano, Masashi</creator><creatorcontrib>Takagawa, Kyouichi ; Sakamoto, Kozo ; Matsuura, Nobuyoshi ; Koyano, Masashi ; Renesas Technology Corporation</creatorcontrib><description>The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit.
Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.</description><language>eng</language><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6700793$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,780,802,885,64039</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6700793$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Takagawa, Kyouichi</creatorcontrib><creatorcontrib>Sakamoto, Kozo</creatorcontrib><creatorcontrib>Matsuura, Nobuyoshi</creatorcontrib><creatorcontrib>Koyano, Masashi</creatorcontrib><creatorcontrib>Renesas Technology Corporation</creatorcontrib><title>Semiconductor device</title><description>The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit.
Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2004</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZBAJTs3NTM7PSylNLskvUkhJLctMTuVhYE1LzClO5YXS3AwKbq4hzh66pcUFiSWpeSXF8elFiSDKwMzcwMDc0tiYCCUASj4h2A</recordid><startdate>20040302</startdate><enddate>20040302</enddate><creator>Takagawa, Kyouichi</creator><creator>Sakamoto, Kozo</creator><creator>Matsuura, Nobuyoshi</creator><creator>Koyano, Masashi</creator><scope>EFH</scope></search><sort><creationdate>20040302</creationdate><title>Semiconductor device</title><author>Takagawa, Kyouichi ; Sakamoto, Kozo ; Matsuura, Nobuyoshi ; Koyano, Masashi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_067007933</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2004</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Takagawa, Kyouichi</creatorcontrib><creatorcontrib>Sakamoto, Kozo</creatorcontrib><creatorcontrib>Matsuura, Nobuyoshi</creatorcontrib><creatorcontrib>Koyano, Masashi</creatorcontrib><creatorcontrib>Renesas Technology Corporation</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Takagawa, Kyouichi</au><au>Sakamoto, Kozo</au><au>Matsuura, Nobuyoshi</au><au>Koyano, Masashi</au><aucorp>Renesas Technology Corporation</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Semiconductor device</title><date>2004-03-02</date><risdate>2004</risdate><abstract>The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit.
Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_uspatents_grants_06700793 |
| source | USPTO Issued Patents |
| title | Semiconductor device |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-18T21%3A57%3A07IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-uspatents_EFH&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Takagawa,%20Kyouichi&rft.aucorp=Renesas%20Technology%20Corporation&rft.date=2004-03-02&rft_id=info:doi/&rft_dat=%3Cuspatents_EFH%3E06700793%3C/uspatents_EFH%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |