Semiconductor device

The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit. Disclosed is a technique capable of improving a power supply efficiency in a power...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Takagawa, Kyouichi, Sakamoto, Kozo, Matsuura, Nobuyoshi, Koyano, Masashi
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The present invention relates to a technique for a semiconductor device. More particularly, the present invention relates to a technique effectively applicable to a semiconductor device having a power supply circuit. Disclosed is a technique capable of improving a power supply efficiency in a power supply circuit. A power MOSFET in a high side of a combined power MOSFET constituting a DC-DC converter is constituted of a horizontal MOSFET, and a power MOSFET in a low side thereof is constituted of a vertical MOSFET.