STI leakage reduction

Semiconductor devices are employed in many types of equipment to perform a wide variety of applications. One important type of semiconductor device for use in the memory field is known as dynamic random access memory (DRAM), which is extensively used as memory components in computers. A basic DRAM cell may include a capacitor and a transistor. The capacitor stores a charge representing data. The transistor allows the data to be written to or read from the capacitor. By reducing the size of the transistor and capacitor, semiconductor manufacturers can fit more DRAM onto a chip. The increase in the amount of DRAM results in greater memory capacity for the chip. A semiconductor device is provided having at least two neighboring transistors and an STI region therebetween. The STI region is provided with a voltage bias to minimize subthreshold leakage current between the neighboring transistors. A method of fabricating such a semiconductor device is also provided.