Plasma vapor deposition with coil sputtering

The present invention relates to the deposition of layers, or films, of metals and metal compounds on a workpiece, or substrate, during fabrication of integrated circuits, display components, etc. In connection with the fabrication of integrated circuits, the substrate may be constituted by one or more semiconductor wafers, while in the case of fabrication of a display, such as a liquid crystal display, the substrate may be one or more glass plates. The substrate could also be a hard disc that will be used for data storage, or read/write heads for a disc drive. A method and apparatus for depositing a layer of a material which contains a metal on a workpiece surface, in an installation including a deposition chamber; a workpiece support providing a workpiece support surface within the chamber; a coil within the chamber, the coil containing the metal that will be contained in the layer to be deposited; and an RF power supply connected to deliver RF power to the coil in order to generate a plasma within the chamber, a DC self bias potential being induced in the coil when only RF power is delivered to the coil. A DC bias potential which is different in magnitude from the DC self bias potential is applied to the coil from a DC voltage source.In order to place a deposition chamber of a physical vapor deposition apparatus in which metal or other material is sputtered from a target and a coil in condition to effect deposition of a layer consisting of the sputtered material on a substrate subsequent to deposition, in the apparatus, of a layer containing a reaction compound of the sputtered material, the chamber is filled with a non-reactive gas and a voltage is applied to sputter from the target and coil any reaction compound which has coated the target and coil during deposition of the layer containing the reaction compound of the sputtered metal.