Silicon oxide based gate dielectric layer

In a field effect transistor ("FET"), a capacitance is associated with a gate dielectric layer, which insulates a gate electrode from a channel disposed within a semiconductor substrate. As semiconductor devices continue to be scaled down to reduce power consumption, the demand for higher...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Muller, David A, Timp, Gregory L
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!