SOI MOSFETS exhibiting reduced floating-body effects

The present invention relates to a thin film silicon-on-insulator semiconductor device, and more particularly a SOI MOSFET that exhibits reduced floating-body adverse effects. The semiconductor device of the present invention includes a pocket halo implant of indium beneath the gate and in the channel region of the semiconductor SOI layer of the device. Furthermore, the present invention relates to a process for fabricating the SOI MOSFET devices of the present invention. Disadvantages of the floating body of a SOI MOSFET are addressed by providing a pocket halo implant of indium beneath the gate and in the channel region of the semiconductor SOI layer of the MOSFET. Also provided is the method for fabricating the device.