Non-volatile high-performance memory device and relative manufacturing process

This application is based upon and claims priority from prior Italian Patent Application No. MI99A002651, filed Dec. 20, 1999, the entire disclosure of which is herein incorporated by reference in its entirety. A non-volatile memory device including a plurality of memory cells, each memory cell formed as MOS transistor with a source region, a drain region and a gate having sides formed therewith; and one or more dielectric spacers disposed on the sides of the gate. At least one memory cell is defined in an ON state and at least one memory cell is defined in an OFF state. The memory cells in the ON state comprise drain regions and source regions of the lightly diffused drain (LDD) type, characterized in that the at least one drain region and the at least one source region of the memory cells in the OFF state are formed by one or more high dopant regions. The memory cells in the OFF state consists of layers of silicide on top of one or more active regions defined as the source region, the drain region, and the gate.