Method of in situ monitoring of thickness and composition of deposited films using raman spectroscopy

The present application relates to semiconductor device manufacturing, and in particular, to in situ monitoring of deposition processes, such as LPCVD processes, using Raman spectroscopy. A novel method is provided for in situ monitoring of a film being deposited on a wafer for manufacturing a semiconductor device. The method involves producing an incident beam of radiation directed during a deposition process to a film being deposited on a wafer in a deposition reactor. The Raman scattered radiation resulted from interaction of the incident beam with molecules of the deposited film is detected to produce a Raman spectrum of the deposited film.