Heterojunction semiconductor device and method of manufacturing

The present invention relates in general to semiconductor devices and, more particularly, to a high-speed semiconductor device structure and a method of manufacturing the same. A semiconductor component () includes a semiconductor substrate () that is formed with trench (). A semiconductor layer ()...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Azam, Misbahul, Loechelt, Gary, Costa, Julio
Format:	Patent
Sprache:	eng
Online-Zugang:	Volltext bestellen
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