Heterojunction semiconductor device and method of manufacturing
The present invention relates in general to semiconductor devices and, more particularly, to a high-speed semiconductor device structure and a method of manufacturing the same. A semiconductor component () includes a semiconductor substrate () that is formed with trench (). A semiconductor layer ()...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | The present invention relates in general to semiconductor devices and, more particularly, to a high-speed semiconductor device structure and a method of manufacturing the same.
A semiconductor component () includes a semiconductor substrate () that is formed with trench (). A semiconductor layer () is formed in the trench for coupling a control signal (V) through a sidewall () of the trench to route a current (I) through a bottom surface () of the trench. |
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