Heterojunction semiconductor device and method of manufacturing

Heterojunction semiconductor device and method of manufacturing

The present invention relates in general to semiconductor devices and, more particularly, to a high-speed semiconductor device structure and a method of manufacturing the same. A semiconductor component () includes a semiconductor substrate () that is formed with trench (). A semiconductor layer ()...

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Hauptverfasser: Azam, Misbahul, Loechelt, Gary, Costa, Julio
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Sprache:eng
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creator Azam, Misbahul
Loechelt, Gary
Costa, Julio
description The present invention relates in general to semiconductor devices and, more particularly, to a high-speed semiconductor device structure and a method of manufacturing the same. A semiconductor component () includes a semiconductor substrate () that is formed with trench (). A semiconductor layer () is formed in the trench for coupling a control signal (V) through a sidewall () of the trench to route a current (I) through a bottom surface () of the trench.
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title Heterojunction semiconductor device and method of manufacturing
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