Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier

The present invention relates in general to data storage systems such as disk drives, and it particularly relates to a thin film read/write head for use in such data storage systems. More specifically, the present invention relates to a thin film, inductive tape read/write head with a spin-dependent tunneling sensor with a low resistance metal oxide tunnel barrier for increased density read sensors at high data transfer rate. A thin film read/write head with a high performance read section that includes a spin-dependent tunneling sensor composed of a new low resistance metal oxide tunneling barrier material, such as chromium oxide (CrO) or niobium oxide (NbO). The chromium oxide material (CrO) can be, for example: CrO, CrO, CrO, CrO, CrO, CrO, other stoichiometry, or any combination thereof. The niobium oxide (NbO) can be, for example: NbO, NbO, NbO, NbO, NbO, NbO, other stoichiometry, or any combination thereof. The chromium oxide and the niobium oxide material provides a very low sensor resistance with an acceptable magnetoresistance ratio, which will enable the fabrication of high density read sensors, and thus read heads with high data transfer rate.