Semiconductor-based spiral capacitor
1. Field of the Invention. Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a seco...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | 1. Field of the Invention.
Increased capacitance per unit of area with reduced series resistance and inductance is provided by a semiconductor-based capacitor with a spiral shape. The capacitor utilizes a plurality of patterned metal layers that each have a first trace with a spiral shape and a second trace with a spiral shape. The second trace is formed between the loops of the first trace, and around the first trace. |
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