Method for forming thin-film layer for device and organic electroluminescence device
The present invention relates to a method for depositing a thin film layer for an element, and an organic electroluminescence element (referred to as an organic EL element), specifically to a method for depositing a thin layer/thin film layers for an element, comprising depositing two or more materi...
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creator | Tokailin, Hiroshi Nagasaki, Yoshikazu |
description | The present invention relates to a method for depositing a thin film layer for an element, and an organic electroluminescence element (referred to as an organic EL element), specifically to a method for depositing a thin layer/thin film layers for an element, comprising depositing two or more materials to be deposited (referred to as a material) by vacuum evaporation, so as to form one or more thin layers superior in homogeneity on a substrate to be deposited (referred to as a substrate), and an organic EL element produced by this film-depositing method.
The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1):wherein Lis a distance from an evaporation source to a plane of the substrate in a perpendicular direction, Dis a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Dis a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Lin a direction of an angle against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen. |
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The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1):wherein Lis a distance from an evaporation source to a plane of the substrate in a perpendicular direction, Dis a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Dis a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Lin a direction of an angle against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.</description><language>eng</language><creationdate>2003</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6649210$$EPDF$$P50$$Guspatents$$Hfree_for_read</linktopdf><link.rule.ids>230,308,776,798,881,64016</link.rule.ids><linktorsrc>$$Uhttps://image-ppubs.uspto.gov/dirsearch-public/print/downloadPdf/6649210$$EView_record_in_USPTO$$FView_record_in_$$GUSPTO$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Tokailin, Hiroshi</creatorcontrib><creatorcontrib>Nagasaki, Yoshikazu</creatorcontrib><creatorcontrib>Idemitsu Kosan Co., Ltd</creatorcontrib><title>Method for forming thin-film layer for device and organic electroluminescence device</title><description>The present invention relates to a method for depositing a thin film layer for an element, and an organic electroluminescence element (referred to as an organic EL element), specifically to a method for depositing a thin layer/thin film layers for an element, comprising depositing two or more materials to be deposited (referred to as a material) by vacuum evaporation, so as to form one or more thin layers superior in homogeneity on a substrate to be deposited (referred to as a substrate), and an organic EL element produced by this film-depositing method.
The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1):wherein Lis a distance from an evaporation source to a plane of the substrate in a perpendicular direction, Dis a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Dis a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Lin a direction of an angle against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.</description><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2003</creationdate><recordtype>patent</recordtype><sourceid>EFH</sourceid><recordid>eNrjZAjxTS3JyE9RSMsvAuHczLx0hZKMzDzdtMycXIWcxMpUsLhCSmpZZnKqQmJeikJ-UXpiXmayQmpOanJJUX5OKVBTanFyah5QHqKMh4E1LTGnOJUXSnMzKLi5hjh76JYWFySWpOaVFMenFyWCKAMzMxNLI0MDYyKUAABO0jnG</recordid><startdate>20031118</startdate><enddate>20031118</enddate><creator>Tokailin, Hiroshi</creator><creator>Nagasaki, Yoshikazu</creator><scope>EFH</scope></search><sort><creationdate>20031118</creationdate><title>Method for forming thin-film layer for device and organic electroluminescence device</title><author>Tokailin, Hiroshi ; Nagasaki, Yoshikazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-uspatents_grants_066492103</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>Tokailin, Hiroshi</creatorcontrib><creatorcontrib>Nagasaki, Yoshikazu</creatorcontrib><creatorcontrib>Idemitsu Kosan Co., Ltd</creatorcontrib><collection>USPTO Issued Patents</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Tokailin, Hiroshi</au><au>Nagasaki, Yoshikazu</au><aucorp>Idemitsu Kosan Co., Ltd</aucorp><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>Method for forming thin-film layer for device and organic electroluminescence device</title><date>2003-11-18</date><risdate>2003</risdate><abstract>The present invention relates to a method for depositing a thin film layer for an element, and an organic electroluminescence element (referred to as an organic EL element), specifically to a method for depositing a thin layer/thin film layers for an element, comprising depositing two or more materials to be deposited (referred to as a material) by vacuum evaporation, so as to form one or more thin layers superior in homogeneity on a substrate to be deposited (referred to as a substrate), and an organic EL element produced by this film-depositing method.
The present invention concerns a method of forming one or more thin films on a substrate by depositing two or more materials by vacuum evaporation, comprising, depositing each material under such control that ni value of the each material is k±0.5 wherein k is a constant from 2 to 5, when relationship between a deposition position and a film thickness of a material i on the substrate is approximated by the following equation (1):wherein Lis a distance from an evaporation source to a plane of the substrate in a perpendicular direction, Dis a film thickness of the material i at an intersection point of a perpendicular line from the evaporation source to the plane of the substrate, and Dis a film thickness of the material i at a position on the substrate which is apart from the evaporation source by a distance Lin a direction of an angle against the perpendicular line. By the method, a homogenous thin film layer for an element can be formed even on a substrate having large screen.</abstract><oa>free_for_read</oa></addata></record> |
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title | Method for forming thin-film layer for device and organic electroluminescence device |
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