Method for forming Co-W-P-Au films

The present invention generally relates to a method for forming quaternary composite films of Co-W-P-Au and devices formed containing such films and more particularly, relates to a method for forming quaternary films of Co-W-P-Au by first forming a Co-W-P alloy film and then electrolessly depositing a Au film on top of the alloy film such that Au diffuses into the alloy film forming the quaternary composite film and devices formed containing such film. A method for forming a quaternary alloy film of Co-W-P-Au for use as a diffusion barrier layer on a copper interconnect in a semiconductor structure and devices formed incorporating such film are disclosed. In the method, a substrate that has copper conductive regions on top is first pre-treated by two separate pre-treatment steps. In the first step, the substrate is immersed in a HSOrinsing solution and next in a solution containing palladium ions for a length of time sufficient for the ions to deposit on the surface of the copper conductive regions. The substrate is then immersed in a solution that contains at least 15 gr/l sodium citrate or EDTA for removing excess palladium ions from the surface of the copper conductive regions. After the pre-treated substrate is rinsed in a first rinsing step by distilled water, the substrate is electroless plated a Co-W-P film on the surfaces of the copper conductive regions in a first plating solution that contains cobalt ions, tungstate ions, citrate ions and a reducing agent. After the substrate coated with the Co-W-P film is rinsed in a second rinsing step by distilled water, the substrate is immersed in a second electroless plating solution for depositing a Au layer on top of the Co-W-P film. The present invention novel quaternary alloy film can be used as an effective diffusion barrier layer between a copper interconnect and silicon substrate or SiOdielectric layers.